دیتاشیت FQD30N06TM
مشخصات دیتاشیت
| نام دیتاشیت |
FQD30N06
|
| حجم فایل |
1395.912
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
10
|
مشخصات
-
RoHS:
true
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Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
onsemi FQD30N06TM
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Operating Temperature:
-55°C~+150°C@(Tj)
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Power Dissipation (Pd):
2.5W;44W
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Total Gate Charge (Qg@Vgs):
25nC@10V
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Input Capacitance (Ciss@Vds):
945pF@25V
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Continuous Drain Current (Id):
22.7A
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Gate Threshold Voltage (Vgs(th)@Id):
4V@250uA
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Reverse Transfer Capacitance (Crss@Vds):
-
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Drain Source On Resistance (RDS(on)@Vgs,Id):
45mΩ@11.4A,10V
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Package:
TO-252
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Manufacturer:
onsemi
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Series:
QFET®
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Packaging:
Cut Tape (CT)
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Part Status:
Active
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FET Type:
N-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss):
60V
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Current - Continuous Drain (Id) @ 25°C:
22.7A (Tc)
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Drive Voltage (Max Rds On, Min Rds On):
10V
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Rds On (Max) @ Id, Vgs:
45mOhm @ 11.4A, 10V
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Vgs(th) (Max) @ Id:
4V @ 250µA
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Gate Charge (Qg) (Max) @ Vgs:
25nC @ 10V
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Vgs (Max):
±25V
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Input Capacitance (Ciss) (Max) @ Vds:
945pF @ 25V
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FET Feature:
-
-
Power Dissipation (Max):
2.5W (Ta), 44W (Tc)
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Mounting Type:
Surface Mount
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Supplier Device Package:
TO-252, (D-Pak)
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Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
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Base Part Number:
FQD3
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detail:
N-Channel 60V 22.7A (Tc) 2.5W (Ta), 44W (Tc) Surface Mount TO-252, (D-Pak)
